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Control number:
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ocn182441582
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ISBN:
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9780735404595
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ISBN:
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0735404593
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Local control number:
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(OCoLC)182441582
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Conference author:
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International Workshop on Stress-Induced Phenomena in Metallization (9th : 2007 : Kyoto, Japan)
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Title:
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Stress-induced phenomena in metallization : Ninth International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan 4 - 6 April 2007 / editors, Shinichi Ogagawa, Paul S. Ho, Ehrenfried Zschech.
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Variant title:
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Ninth International Workshop on Stress-Induced Phenomena in Metallization
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Variant title:
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International Workshop on Stress-Induced Phenomena in Metallization
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Imprint:
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Melville, N.Y. : American Institute of Physics, ; 2007.
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Physical description:
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vii, 204 p. : ill. ; 24 cm.
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Series:
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(AIP conference proceedings,ISSN0094-243X ; 945)
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Partial contents:
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Resistivity reduction of Cu Interconnects / K. Ito ... [et al.] -- Molecular dynamic simulation of a metal crystal under stress / C. Lenihan, D. Corcoran, and S. Nakahara -- Metallization local stress monitoring in industrial semiconductor processes / M. Kasbari ... [et al.] -- Electromigration reliability of advanced interconnects / C.-K. Hu ... [et al.] -- Microstructure effect on EM-induced degradations in dual-inlaid copper interconnects / A. Kteyan ... [et al.] -- Electromigration-induced plasticity and texture in Cu interconnects / A.S. Budiman ... [et al.] -- Large-scale statistical study of electromigration early failure for Cu/low-k interconnects / M. Hauschildt ... [et al.] -- Impurity doping effects on electromigration performance of scaled-down Cu interconnects / S. Yokogawa and H. Tsuchiya -- Reliability improvement by adopting Ti-barrier metal for porous low-k ILD structure / A. Sakata ... [et al.] -- New microstructure-related EM degradation and failure mechanisms in Cu interconnects with CoWP coating / M.A. Meyer and E. Zschech -- Study on stress migration behavior in narrow copper lines / T. Suzuki ... [et al.] -- Mechanistic study of plasma damage of low k dielectric surfaces / J. Bao ... [et al.] -- Low-k material characterization with high spatial resolution : k value and E modulus / E. Zschech ... [et al.] -- Nanometer-scale stress field evaluation of Cu/ILD structure by cathodoluminescence spectroscopy / M. Kodera ... [et al.] -- Structure and physical properties of computer-simulated fullerene-based ultralow-k dielectric materials / K. Zagorodniy ... [et al.] -- Effects of chip-package interaction on mechanical reliability of Cu interconnects / C.J. Uchibori ... [et al.] -- Effects of current crowding and Joule heating on reliability of solder joints / S.W. Liang, S.H. Chiu, and C. Chen -- Study of electromigration of flip-chip solder joints using Kelvin probes / Y.W. Chang and C. Chen.
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Held by:
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NYSL
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Subject:
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Interconnects (Integrated circuit technology)--Defects--Congresses.
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Subject:
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Metal-metal bonds--Congresses.
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Subject:
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Strength of materials--Congresses.
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Subject:
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Nanostructured materials--Congresses.
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Subject:
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Semiconductors--Congresses.
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Subject:
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Copper--Electric properties--Congresses.
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Added entry:
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Ogawa, Shin’ichi.
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Added entry:
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Ho, P. S.
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Added entry:
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Zschech, Ehrenfried.
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Series:
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(AIP conference proceedings ; no. 945.)
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Electronic access:
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Publisher description http://www.loc.gov/catdir/enhancements/fy0826/2007937338-d.html
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Call number:
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621.38152 I618 208-4116
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